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Towards the realization of a InP/CdS/LaS cold cathode

机译:致力于实现InP / CdS / LaS冷阴极

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摘要

In the past, we have proposed a new cold cathod emitter which consists of a thin region of CdS (Cadmium Sulfide) sandwiched between a heavily doped InP (Indium phsphilde) substrate and a low work function LaS (Lanthanum Sulfide) semimetallic thin film. In this paper, we briefly review the principle of operation of the cathode and discuss the pereliminary experimental steps undertaken to realize prototypes of the device. More specificlly, we describe the growth of bulk samples of LaS which is used to achieve Negative Electron Affinity of the CdS/LaS surface. X-ray diffraction and micro-Raman experiments show the successful growth of the fcc cubic phase of LaS samples.
机译:过去,我们已经提出了一种新型的冷阴极发射极,该发射极由夹在重掺杂InP(Phsphilde)衬底和低功函数LaS(Lanthanum Sulfide)半金属薄膜之间的CdS(硫化镉)薄区域组成。在本文中,我们简要回顾了阴极的工作原理,并讨论了为实现该装置的原型所采取的实验步骤。更具体地说,我们描述了LaS大量样品的生长,该样品用于实现CdS / LaS表面的负电子亲和力。 X射线衍射和显微拉曼实验表明,LaS样品的fcc立方相得以成功生长。

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