Epitaxial growth of zinc-blened ain by plasma source molecular beam epitaxy

摘要

Epitaxial zinc-blende AlN films as thick as 2000A were deposited on Si (100) substrates by plama source molecular beam epitaxy (PSMBE). The metastable zinc-blende form of AlN was observed to occur when pulse d.c. power was supplied to the PSMBE hollow cathode source. Reflection High Energy Electron Diffraction (RHEED) showed that the films possess a four fold symmetry. X-Ray Diffraction (XRD) revealed two strong peaks corresponding to the (200) and (400) reflections from the zinc-blende AlN. The lattice parameter of the films was calculated to be approximately 4.373A. TEM, performed on one of the films, revealed that the AlN is cubic, single crystalline and epitaxial with respect to the Si (100) substrate.