Diffusion and self-gettering of nickel in float zone silicon wafers

摘要

External gettering techniques trap removed impurities in regions of a semiconductor which contain defects or in which the solubility is enhanced like in phosphorus diffused layers or in Al-Si alloy. If a fast diffuser like nickel is used in place of Al to obtain an alloy or a ocmpound close to the surface, contamination and decontamination can occur resulting of the indiffusion and removal of nickel atoms.