Metal organic chemical vapor deposition of Co-, Mn-, Co-Zr and Mn-Zr oxide thin films

摘要

Deposition of thin films of Co-and Mn-oxides as well as of their mixtures with ZrO_2 have been carried out by MOCVD using Co(C_5H_5)_2, Mn(C_5F_6HO_2)_2(THF)_2 and (C_5H_5)_2Zr(CH_3)_2 as precursors. XRD and XPS analyses of the obtained deposits are reported. Introduction of water vapor into the reactor chamber during the flow of the precursors improved their decomposition efficiency and the quality of the films.