2-DIMENSIONAL CONTROLLED LARGE LATERAL GRAIN GROWTH ON THE FLOATING AMORPHOUS SILICON FILM BY EXCIMER LASER RECRYSTALLIZATION

摘要

We have successfully obtained large lateral grains with well-controlled grain boundary. The proposed excimer laser annealing (ELA) method produces 2-dimensionally controlled grain growth because the temperature gradient is induced in two directions. Along the channel direction, the floating active structure produces large thermal gradient due to very low thermal conductivity of the air-gap. Along the perpendicular direction to the channel, the surface tension effect also produces thermal gradient. The proposed ELA method can control the grain boundary perpendicular and parallel to current path with only one laser irradiation.