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Laser Fizeau interferometer for silicon wafer site flatness testing

机译:激光Fizeau干涉仪,用于硅晶圆平面度测试

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Abstract: Requirements on wafer flatness, like most semiconductor specifications, are becoming increasingly tight, with greater accuracy and resolution needed for measurements. In addition to traditional peak-to-valley surface deviation and root-mean- square roughness measurements, it is desirable to measure the flatness of silicon wafers over a small area, or site flatness. This involves dividing the wafer into many sub- regions and calculating the surface statistics for these smaller regions in addition to the overall wafer statistics. Veeco Metrology has developed a high-resolution phase-shifting laser Fizeau interferometer for site flatness testing. The system is designed with 40 mm $MUL 40 mm square field and a 1000 $MUL 1000 pixel CCD camera. Features as small as 100 micrometer may be measured by the system with high resolution, repeatability, and accuracy. A motorized stage allows any region of the wafer to be measured by the system such that problem areas do not escape measurement. This paper discusses the overall system design and presents data from the wafer flatness tester developed by Veeco. Data on lateral resolution, vertical repeatability and accuracy are presented. In addition, the site flatness statistics of a silicon wafer measured by the instrument are given. !4
机译:摘要:与大多数半导体规格一样,对晶圆平整度的要求越来越严格,测量所需的精度和分辨率也更高。除了传统的峰谷表面偏差和均方根粗糙度测量之外,还需要在小面积上测量硅晶片的平整度或部位平整度。这包括将晶圆划分为许多子区域,并计算除总体晶圆统计信息以外的这些较小区域的表面统计信息。 Veeco Metrology开发了一种高分辨率相移激光Fizeau干涉仪,用于场地平面度测试。该系统采用40 mm $ MUL 40 mm方形视场和1000 $ MUL 1000像素CCD相机设计。系统可以以高分辨率,可重复性和准确性来测量小至100微米的特征。电动载物台允许系统测量晶圆的任何区域,以使问题区域不会脱离测量。本文讨论了整个系统的设计,并提供了Veeco开发的晶片平坦度测试仪的数据。给出了有关横向分辨率,垂直重复性和准确性的数据。另外,给出了通过仪器测量的硅晶片的平面度统计数据。 !4

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