High Mobility Compound Semiconductor Permeable Base Transistors with Suppressed Base Current

机译：具有低基极电流的高迁移率化合物半导体可渗透基极晶体管

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

Two novel Permeable Base Transistor (PBT) structures for base leakage suppression with lattice-matched Ino.53Gao.47As channel have been proposed. The operations of these novel devices have been analyzed, and their DC and RF performance have been evaluated against the conventional PBT.

机译：提出了两种新颖的可渗透基极晶体管（PBT）结构，用于通过晶格匹配的Ino.53Gao.47As通道抑制基极泄漏。分析了这些新颖设备的操作，并针对常规PBT评估了它们的DC和RF性能。

著录项

来源
《State-of-the-art program on compound semiconductors 52 (SOTAPOCS 52)》|2010年|p.93-101|共9页
会议地点 Las Vegas NV(US);Las Vegas NV(US);Las Vegas NV(US)
作者
Kun-Huan Shih; Chi On Chui;
展开▼
作者单位

Department of Electrical Engineering, University of California, Los Angeles Los Angeles, CA 90095-1594, U. S. A;

Department of Electrical Engineering, University of California, Los Angeles Los Angeles, CA 90095-1594, U. S. A;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类材料;
关键词

相似文献

外文文献
中文文献
专利

1. A Compact Current–Voltage Model for 2D Semiconductor Based Field-Effect Transistors Considering Interface Traps, Mobility Degradation, and Inefficient Doping Effect [J] . Cao W., Kang J., Liu W., Electron Devices, IEEE Transactions on . 2014,第12期

机译：考虑界面陷阱，迁移率降低和低效掺杂效应的基于2D半导体的场效应晶体管的紧凑电流电压模型
2. Analysis of effective mobility and hall effect mobility in high-fr based ln_(0.75)Ga_(0.25)As metal-oxide-semiconductor high-electron-mobility transistors [J] . M. A. Negara, D. Veksler, J. Huang, Applied Physics Letters . 2011,第23期

机译：高fr基In_（0.75）Ga_（0.25）As金属氧化物半导体高电子迁移率晶体管的有效迁移率和霍尔效应迁移率分析
3. Thin-Film Morphology Control in Naphthalene-Diimide-Based Semiconductors: High Mobility n-Type Semiconductor for Organic Thin-Film Transistors [J] . Deepak Shukla, Shelby F. Nelson, Diane C. Freeman Chemistry of Materials: A Publication of the American Chemistry Society . 2008,第24期

机译：萘二酰亚胺基半导体中的薄膜形态控制：用于有机薄膜晶体管的高迁移率n型半导体
4. High Mobility Compound Semiconductor Permeable Base Transistors with Suppressed Base Current [C] . Kun-Huan Shih, Chi On Chui Symposium on State-of-the-Art Program on Compound Semiconductors . 2010

机译：高迁移率化合物半导体可渗透的基座晶体管，具有抑制基底电流
5. Effect of Irradiation Damage on GaN-Based Metal-Oxide Semiconductor High Electron Mobility Transistors and β-GA2O3 [D] . Ahn, Shihyun. 2017

机译：辐照损伤对GaN基金属氧化物半导体高电子迁移率晶体管和β-GA2O3的影响
6. Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities [O] . Xia Kong, Xia Zhang, Dameng Gao, 2015

机译：基于高迁移率和平衡载流子迁移率的溶液加工的八萘氧基取代的三（酞菁基）euro半导体的空气稳定双极性场效应晶体管
7. Suppressing Base Currents in Organic Permeable-Base Transistors by Anodization of the Base Electrode [O] . -1

机译：通过基极的阳极氧化抑制有机渗透基晶体管中的基础电流
8. Current Prospects for the Permeable Base Transistor [R] . Bozler, C. O. 1986

机译：透水基底晶体管的当前展望

High Mobility Compound Semiconductor Permeable Base Transistors with Suppressed Base Current

摘要

著录项

相似文献

相关主题

期刊订阅