Optically pumped type-Ⅱ antimonide lasers

摘要

We review the development of optically pumped mid-infrared (mid-IR) lasers based on InAs/InGaSb/InAs type-Ⅱ quantum wells. Using essentially the same heteroepitaxial design, high power conversion efficiency and improved beam quality have been demonstrated in devices emitting in the wavelength range from ～2.2 μm to ～9.3 μm. More specifically, at ～80K, the lasers typically operate with a photon-to-photon conversion efficiency of ～60% (Figure 1), and a beam quality near 2-3 times the diffraction-limit, producing multi-Watt output power with high brightness.