High performance optically pumped antimonide lasers operating in the 2.4-9.3 μm wavelength range

摘要

We provide an update on the further development of optically pumped semiconductor lasers based on the InAs/InGaSb/InAs type-II quantum wells. We show increased power generation, as well as the inherent flexibility to produce devices that can emit at any wavelength in the ～2.4 μm to ～9.3 μm range with consistently high photon-to-photon conversion rates.