A sub-1V bandgap voltage reference in 32nm FinFET technology

摘要

The bulk CMOS technology is expected to scale down to about 32 nm node and likely the successor would be the FinFET. The FinFET is an ultra-thin body multi-gate MOS transistor with among other characteristics a much higher voltage gain compared to a conventional bulk MOS transistor. Bandgap reference circuits cannot be directly ported from bulk CMOS technologies to SOI FinFET technologies, because both conventional diodes cannot be realized in thin SOI layers and also, area-efficient resistors are not readily available in processes with only metal(lic) gates. In this paper, a sub-1 V bandgap reference circuit is implemented in a 32 nm SOI FinFET technology, with an architecture that significantly reduces the required total resistance value.