OXIDATION REMOVAL BEHAVIOR OF BORON AND LOCAL NONEQUILIBRIUM REACTION FIELD IN PURIFICATION PROCESS OF MOLTEN SILICON BY THE FLUX INJECTION TECHNIQUE

摘要

Oxidation removal of boron from molten silicon by injecting oxygen and highly basic CaO-CaF_2 flux powder has been investigated with special attention to the dynamic behavior of the injected flux particles and gas bubbles. Since oxygen gas is injected into the melt, high oxygen partial pressure is maintained at the flux-O_2-Si interface and the removal of boron proceeds under nonequilibrium conditions. By applying this process, boron concentration in metallurgical-grade silicon can be reduced to a single-ppm level. In this paper, the effects of the dynamic behavior of the flux particles injected into the silicon melt and the area of the reaction field (the flux-O_2-Si interface) formed in the vicinity of the flux-gas exit of the injection nozzle on the rate of the boron removal are discussed from the viewpoint of process dynamics. The experimental results clarified that the boron removal rate is affected by the kinetic energy of the flux particles which is determined by the injection conditions, such as the gas-flow rate of oxygen and the size of the flux particles. At higher oxygen gas-flow rates, the injected flux particles are expected to possess a significantly high kinetic energy such that they penetrate the CVSi interface formed at the nozzle exit, which results in the formation of a new reaction field for boron removal. On the other hand, at lower gas-flow rates, the injected flux particles possess too low kinetic energy to penetrate the interface. In this case where the formation of the reaction field is limited, it is shown experimentally that the rate of the boron removal is constant, independently of the flux injection rate.