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Fabrication of Nanometer Sized Features on Non-Flat Substrates Using a Nano-Imprint Lithography Process

机译:使用纳米压印光刻技术在非平坦基板上制备纳米尺寸特征

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The Step and Flash Imprint Lithography (S-FILTM) process is a step and repeat nano-imprintlithography (NIL) technique based on UV curable low viscosity liquids. Generally nano-imprintlithography (NIL) is a negative acting process which makes an exact replica of the imprint mold and issubsequently dry developed to reveal the underlying substrate material. The authors have demonstrated anovel imprint process, which reverses the tone of the imprint and enables dry develop on nonflat waferswith good critical dimension control and resist layer thickness. This positive acting NIL process termedSFIL/RTM(reverse tone S-FIL), enables nano-imprinting over intrinsic substrate topology of the typecommonly found on single side polished substrates. This paper describes the SFIL/R process and theresults of pattern transfer on single side polished silicon wafers.
机译:分步和快速压印光刻(S-FILTM)工艺是基于UV可固化低粘度液体的分步和重复纳米压印光刻(NIL)技术。通常,纳米压印术(NIL)是一个负作用过程,该过程可精确复制压印模具,然后进行干法显影以露出下面的基材。作者已经演示了阳极压印工艺,该工艺可以反转压印的色调,并能够在具有良好的临界尺寸控制和抗蚀剂层厚度的非平面晶片上进行干显影。这种被称为SFIL / RTM(反向色调S-FIL)的正作用NIL工艺能够在单面抛光基板上常见的固有基板拓扑上进行纳米压印。本文介绍了SFIL / R工艺以及在单面抛光硅晶片上进行图案转移的结果。

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