Development of Specifications for an Integrated Piezoelectric Wafer Active Sensors System

摘要

This paper describes work performed in the development of a set of specification for the construction of an integrated electronic system for piezoelectric wafer active sensor (PWAS). The paper starts with a comprehensive review of the PWAS material properties, dimensions, and electrical characteristics. PWAS of various shapes and sizes are considered. Two boundary conditions were examined: free PWAS and PWAS attached to actual structures. For both, the PWAS immittance and the allowable dc and ac voltages were considered. The predicted values were compared with measurements performed over a wide frequency range (10 kHz to 2 MHz). Next, the electronic-equipment specifications were considered. The PWAS can be used in a number of different ways to actively detect damage in structures. Our aim was to develop electronic-equipment specifications that would extract the optimum performance from the PWAS, i.e., maximize the coupling with the structure and obtain large-amplitude Lamb wave transmission and reception. Analytical predictions were compared with measurements made using current laboratory equipment. The comparative analysis revealed that the current electronic equipment does not fully exploit the PWAS capabilities. Hence, the PWAS equipment specifications were divided into two categories: "existing" and "desired". The former category designates integrated electronic equipment that would offer the same PWAS performance as the existing lab equipment, but be of a lower volume/weight/cost. The latter category refers to advanced electronic equipment that will exploit the full potential of PWAS transducers while being of lower volume/weight/cost than the lab equipment. Both categories are presented and discussed in the paper.