首页> 外文会议>Sixth International Symposium on High Purity Silicon VI, Oct 22-27, 2000, Phoenix, Arizona >Copper Stable Isotope Spike Method as A Tool for Low Temperature Out-Diffusion of Copper in P-Type Silicon
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Copper Stable Isotope Spike Method as A Tool for Low Temperature Out-Diffusion of Copper in P-Type Silicon

机译:铜稳定同位素加标方法作为P型硅中铜低温向外扩散的工具

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A stable copper isotope, ~(65)Cu, was used as a tracer to verify quantitatively the bulk contamination and out-diffusion of copper. The sample wafers were p-type Cz Si crystals with 8.5 ~ 11.5 ohm-cm, (100) orientation and diameter of 200mm. To spike Cu isotopes, Si wafers were immersed in alkaline baths including organic amine or ammonium hydroxide spiked with ~(65)Cu isotope. IR irradiation was used to diffuse copper out of bulk Si wafers. Surface and out-diffused copper was extracted by the acid-drop method and ETV-ICP-MS was used for determination of copper. The results showed the incorporation of copper increased with the copper concentration of bath solution, and the stable isotope could be used as a tracer for the copper contamination in p-type Si wafer.
机译:稳定的铜同位素〜(65)Cu被用作示踪剂,以定量验证铜的整体污染和扩散。样品晶片为p型Cz Si晶体,取向为8.5〜11.5 ohm-cm(100),直径为200mm。为了掺加铜同位素,将硅片浸入碱性浴中,该碱浴包括掺有〜(65)Cu同位素的有机胺或氢氧化铵。红外辐射用于将铜扩散出块状硅晶片。通过酸滴法提取表面和未扩散的铜,并使用ETV-ICP-MS测定铜。结果表明,铜的掺入量随镀液中铜浓度的增加而增加,稳定的同位素可作为p型硅晶片中铜污染的示踪剂。

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