Progress in understanding the physics of copper in silicon

摘要

The recent progress in understanding the physics of copper in silicon is reviewed. It is shown that diffusivity, solubility, and kinetics of nucleation and growth of copper-silicide precipitates in the bulk of silicon and outdif-fusion of copper to the wafer surfaces is to a significant extent determined by the positive charge state of interstitial copper. The impact of copper contamination on minority carrier lifetime and device yield and the efficiency of gettering techniques in reduction of copper contamination level in the vicinity of devices are discussed.