首页> 外文会议>The Sixth International Display Workshops, Dec 1-3, 1999, Sendai, Japan >Field Emission from Boron Carbon Nitride Films Synthesized by Plasma-Assisted Chemical Vapor Deposition
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Field Emission from Boron Carbon Nitride Films Synthesized by Plasma-Assisted Chemical Vapor Deposition

机译:等离子体辅助化学气相沉积合成的氮化硼碳薄膜的场发射

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Boroncarbonnitride (BCN) films are synthesized by plasma-assisted chemical vapor deposition. Borontrichloride (BCl_3), methane (CH_4) and nitrogen (N_2) are used as source gases. It is revealed from transmission electron microscopic observation that BCN films consist of crystal grains, the size of which is about 3 nm. Existence of B-N, B-C and C-N bonds are detected by x-ray photoelectron spectroscopy. Electron emission is detected at an electric field as low as 11 V/μm for the BCN film deposited on n-Si substrate. It is also demonstrated that the cathode metal contacted to BCN films has an influence on field emission characteristics.
机译:碳氮化硼(BCN)膜是通过等离子体辅助化学气相沉积法合成的。三氯化硼(BCl_3),甲烷(CH_4)和氮气(N_2)用作原料气。从透射电子显微镜观察可以看出,BCN膜由晶粒组成,晶粒的尺寸约为3nm。通过X射线光电子能谱检测B-N,B-C和C-N键的存在。对于沉积在n-Si衬底上的BCN膜,在低至11 V /μm的电场下检测到电子发射。还证明了接触BCN膜的阴极金属对场发射特性有影响。

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