A Mo-silicidized a-Si FEA

摘要

In order to overcome the isolation problem, and improve electron field emission and its stability, tip surface of amorphous silicon field emitters have been coated with molybdenum layer with a thickness of 25 nm through the gate opening and annealed rapidly at 1000℃ in inert ambient. Compared with pure amorphous silicon field emitters, Mo-silicidized amorphous silicon field emitters exhibited significant improvement in both emission current and stability, and less change of the emission current depending on the vacuum level.