MECHANISM OF IRRADIATION INDUCED DEGRADATION OF SOLAR CELLS

摘要

We derive the dependences of the short circuit current and open circuit voltage of a solar cell versus the logarithm of the fluence in terms of the characteristics of the recombination centers introduced by an irradiation. Then from experimental data we extract the values of these characteristics for GaAs and GaInP cells. We finally apply this analysis to modelize the degradation of a GaAs/GaInP/Ge cell.