Growth of cubic SiC on Si substrate by CVD using hexamethyldisilane and hexachlorodisilane

摘要

3C-SiC was grown on Si substrates using hexamethyldisilane (HMDS) and hexachlorodisilane (HCDS). HCDS was used as a Si source to compensate excess carbon in HMDS. By using HCDS in HMDS system, the crystallinity of SiC(111) was improved and the activation energy(Ea) decreased. It was found that the growth mechanism was different between Si(111)and Si(100).