Graphene heat spreaders for thermal management of HBTs

摘要

Thermal-management design for power devices by placing the 2D graphene heat spreader (GHS) at the backside of collector-up heteroj unction bipolar transistors (HBTs) is presented. Temperature distribution in the GHS and the application of these spreaders to ameliorate thermal-coupling effects on multi-finger transistors were discussed. Compared to the npn device, the pnp device exhibits greater thermal-stability enhancement results, which are extraordinary and reproducible. Both numerical simulation and experimental measurement were achieved to scrutinize thermal performance of the GHS.