A novel vertical tunnel FET of band-to-band tunneling aligned with gate electric field with averaged SS of 28 mV/decade

摘要

We propose a novel vertical tunnel FET of band-to-band tunneling aligned with the gate electric field. Simulation results show high drive current and extremely sharp subthreshold swing due to excellent gate control over the tunnel junction. OFF state leakage via source-to-drain tunneling is much suppressed by the spacer layer between the source and drain layers. Furthermore, this device is fully compatible to VLSI technology.