首页> 外文会议>Silicon Carbide and Related Materials - 2005 pt.1; Materials Scinece Forum; vols.527-529 >In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging
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In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging

机译:通过X射线成像原位观察CF-PVT生长过程中的传质

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The development of the Continuous Feed Physical Vapour Transport (CF-PVT) process requires a perfect control of each phenomenon in the growth cell. Along this line, the present paper gives some inputs on the CF-PVT mass transfer regimes with respect to the process parameters, both from qualitative and quantitative viewpoints. For example, two boundary cases have been evidenced depending on the temperature. At low temperature, the growth is limited by the sublimation step between the source and the seed. In this case, the CF-PVT process can be roughly assimilated to the classical seeded sublimation technique. At high temperature, the process is limited by the feeding step, i.e. the CVD deposition and infiltration on the lower part of the source. Measurements are correlated to in-situ X-ray imaging. The ability of the X-ray imaging to in-situ qualify and quantify the mass transfer is discussed.
机译:连续饲料物理蒸气传输(CF-PVT)工艺的发展需要对生长细胞中每种现象的完美控制。沿着这条思路,本文从定性和定量的角度就工艺参数对CF-PVT传质机制提出了一些建议。例如,根据温度证明了两个边界情况。在低温下,生长受到源和种子之间的升华步骤的限制。在这种情况下,CF-PVT工艺可以大致等同于经典的种子升华技术。在高温下,该工艺受到进料步骤的限制,即在源下部的CVD沉积和渗透。测量值与原位X射线成像相关。讨论了X射线成像原位鉴定和量化传质的能力。

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