ELECTROCHEMICAL PROPERTIES OF SULFUR-DOPED DIAMOND

摘要

The electrical and electrochemical properties of sulfur-doped diamond were explored. Mott-Schottky analysis, measurements of open-circuit potentials in the presence of UV irradiation, and the thermoelectric effect showed n-type conductivity. Particle induced x-ray emission (PIXE) and X-ray photoelectron spectroscopy (XPS) confirmed the presence of sulfur. Sulfur incorporation was achieved only after the introduction of boron to the reactor. We believe that co-doping with boron facilitates sulfur incorporation.