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Regeneration of Used Oxide Slurry and Its Application to Oxide CMP

机译:废氧化物浆料的再生及其在氧化物CMP中的应用

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摘要

Since Chemical Mechanical Planarization(CMP) has been routinely utilized in integrated circuit(IC) fabrication, the consumption of slurry, main consumable in the CMP process, is greatly increased. The main purpose of this study was to regenerate the used oxide slurry using filters. The solid content in regenerated slurry was controlled by UF(UltraFine) filtration which extracts only solution from diluted slurry. RO(Reverse Osmosis) filtration was adapted to recover chemicals added in the original slurry formulation by rejecting pure DI water from used slurry solutions which was collected by UF filtration. The normal slurry was intentionally added in the regenerated slurry to reduce the process time and increase the life time of used slurry. The same removal rate of TEOS oxide was observed when CMP was performed using the regenerated oxide slurry. No microscratches were observed in the wafer polishing by regenerated slurry. Also, the defect density of polished wafers was decreased when polished by the regenerated slurry.
机译:由于化学机械平面化(CMP)通常用于集成电路(IC)的制造中,因此CMP过程中主要消耗的浆料消耗量大大增加。这项研究的主要目的是使用过滤器再生废氧化物浆。再生浆液中的固体含量通过UF(UltraFine)过滤控制,该过滤仅从稀释的浆液中提取溶液。 RO(反渗透)过滤适用于通过从用过的浆料溶液中滤除纯去离子水来回收添加到原始浆料配方中的化学物质,而用过的浆料溶液是通过超滤过滤收集的。将普通浆料有意地添加到再生浆料中以减少处理时间并增加用过的浆料的寿命。当使用再生氧化物浆料进行CMP时,观察到相同的TEOS氧化物去除速率。通过再生浆料在晶片抛光中未观察到微划痕。同样,当用再生浆料抛光时,抛光晶片的缺陷密度降低了。

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