Electro-Optical Modulating Multistack Device Based on the CMOS-Compatible Technology of Amorphous Silicon

摘要

We report results on a field-effect induced light modulation at λ= 1.55 u.m in a high-index-contrast waveguide based on a multisilicon-on-insulator (MSOI) platform. The device is realized with the hydrogenated amorphous silicon (a-Si:H) technology and it is suitable for monolithic integration in a CMOS integrated circuit. The device exploits the free carrier optical absorption electrically induced in the multistack core waveguide.