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Application of Sacrificial Layers for the Modular Micro Sensor Fabrication on a Flexible Polymer Substrate

机译:牺牲层在柔性聚合物基板上模块化微传感器制造中的应用

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摘要

A concept for the fabrication of modular micro sensors on a flexible substrate is presented in this paper.rnFor the fabrication of micro sensors on flexible polymer substrates, investigations on sacrificial layers arernessential, since it must be possible to release the sensors at the end of the fabrication process. Thisrnpaper describes the development and fabrication of an anisotropic magneto-resistance (AMR) sensor onrna 5 μm thick SU-8? layer, which is an epoxy-based photosensitive polymer. The micro sensor isrnfabricated on a standard Si wafer due to handling purposes during the sensor fabrication process. Initialrninvestigations concentrated on the proof of the applicability of various sacrificial layer materials and thernprocess compatibility of the respective techniques required for the removal of these layers. To investigaternthe suitability of a sacrificial layer process for the fabrication of modular micro sensors, Cr and SiO_2 wererninvestigated as sacrificial layer materials. Additionally, investigations on the removal of the complete Sirnsubstrate were carried out. Cr layers were fabricated within a certain thickness range by sputterrndeposition and electron beam evaporation. For the deposition of the SiO_2 layers, a plasma enhancedrnchemical vapor deposition (PECVD) process was used. For the removal of the sacrificial layer with thernAMR sensors on the SU-8? foil on top, adequate processes were developed. The etching of the Sirnsubstrate was carried out wet-chemically by caustic potash (KOH). For etching the SiO_2 layers,rnhydrofluoric acid (HF) and for Cr etching, the commercial etchant Selectipur? was used. Optimal processrnparameters were determined for etching the Si and SiO_2 sacrificial layers, respectively.
机译:本文提出了在柔性基板上制造模块化微传感器的概念。对于在柔性聚合物基板上制造微传感器,必须在牺牲层上进行研究,因为必须有可能在生产结束时释放传感器。制造过程。本文描述了在厚度为5μm的SU-8上的各向异性磁阻(AMR)传感器的开发和制造。层,其是基于环氧的光敏聚合物。由于传感器制造过程中的处理目的,微传感器被制造在标准的硅晶片上。最初的研究集中在证明各种牺牲层材料的适用性以及去除这些层所需的各个技术的工艺兼容性。为了研究牺牲层工艺对模块化微传感器制造的适用性,研究了Cr和SiO_2作为牺牲层材料。此外,还进行了去除完整Sirn基质的研究。通过溅射沉积和电子束蒸发在一定厚度范围内制造Cr层。为了沉积SiO_2层,使用了等离子体增强化学气相沉积(PECVD)工艺。要使用SU-8上的rnAMR传感器去除牺牲层?在顶部的箔上,开发了适当的工艺。 Sirn基板的蚀刻是通过苛性钾(KOH)湿化学法进行的。为了蚀刻SiO_2层,氢氟酸(HF)和进行Cr蚀刻,可以使用市售的蚀刻剂Selectipur?。被使用了。确定了分别刻蚀Si和SiO_2牺牲层的最佳工艺参数。

著录项

  • 来源
    《Sensor+Test conference 2011》|2011年|p.355-360|共6页
  • 会议地点 Nurnberg(DE);Nurnberg(DE);Nurnberg(DE);Nurnberg(DE);Nurnberg(DE);Nurnberg(DE)
  • 作者单位

    Institute for Micro Production Technology, Center for Production Technology Leibniz Universitaet Hannover, An der Universitaet 2, 30823 Garbsen, Germany;

    Institute for Micro Production Technology, Center for Production Technology Leibniz Universitaet Hannover, An der Universitaet 2, 30823 Garbsen, Germany;

    Institute for Micro Production Technology, Center for Production Technology Leibniz Universitaet Hannover, An der Universitaet 2, 30823 Garbsen, Germany;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 TP212;
  • 关键词

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