Simulation study on the enhancement of HgCdTe infrared detector with multi-level-profile photonic crystal

摘要

The photonic crystal structure can be utilized for improving the transmission within a broadband, and suppressing the dark current of detector efficiently as well. Considering such an advantage, the study on the multi-level profile photon-trapping structure is performed; meanwhile, the enhancement of HgCdTe mid-wavelength infrared detector based on such a structure is analyzed. With the help ot'FDTD model and FEM model, via optimizing the structure, a multi-level profile photon-trapping detector scheme with a quantum efficiency enhancement of 20% is established. The proposed simulation results and structure are crucial for further acquiring HgCdTe detector with enhanced SNR.