Electrografting of Organic Monolayers on Planar and Nanowire Silicon Substrates

摘要

Silicon surfaces with controllable dielectric properties are of interest for hybrid (organic -silicon) interfaces. Silicon surfaces form native oxides in ambient conditions and these nonuniform oxides (and suboxides) typically show high levels of defects and are not suitable for biosensing or other organic-silicon interface applications. Hydride-termination via HF treatment could provide a hydrophobic surface but is thermodynamically unstable and forms native oxides after a few hours. Fortunately, directly functionalized surfaces of silicon-organic (Si-C) interfaces are relatively inert towards oxidation and reduce susceptibility to nucleophilic substitution reactions compared to hydride termination.