A high efficient, low power, and compact charge pump by vertical MOSFET's

摘要

In the semiconductor memory design, especially for the non-volatile memory, the charge pump circuits are indispensable. Dickson's charge pump circuit [1] suffers from the threshold voltage increase of the diode connected charge transfer transistors according as the number of stage increases due to the back-bias effect. Therefore, a number of efforts have been done [2]-[5]. However, all attempts have problems of both the chip size enlargement and the power consumption increase because the additional circuits or wells are required.