Cold/Hot Al Process for deep 0.4#mu#m contact filling Effects of flow temperature and Modification

摘要

A cold/hot Al sputtering was processing to fill contact, 0.4 #mu#m open, aspect ratio up to 4.0 and collimated Ti/TiN was initial deposited following RTP treatment to be barrier layer. Stacks, IMP Ti 80nm/ Cold Al 200nm/ Hot Al 800nm, were deposited without vacuum break in an Endura PVD system. A base vacuum (2 x 10~(-8) Torr) was required to prevent oxygen contamination and maintain a clean surface for sputtering.