首页> 外文会议>Second International Symposium on Cold Cathodes May 13-14, 2002 Philadelphia, Pennsylvania >EFFECT OF FILM THICKNESS ON LOW-ENERGY ELECTRON TRANSMISSION IN THIN CVD DIAMOND FILMS
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EFFECT OF FILM THICKNESS ON LOW-ENERGY ELECTRON TRANSMISSION IN THIN CVD DIAMOND FILMS

机译:薄膜厚度对薄CVD金刚石膜中低能电子传输的影响

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摘要

Transmission electron spectroscopy is used to examine the low-energy-electron transport and emission properties of thin CVD diamond films. In particular, the intensity and energy distribution of transmitted electrons are measured as a function of film thickness and incident beam parameters. Low-energy transmission is detected in measurements from two films of thickness 0.15 μm and 2.5 μm with similar B concentrations. The transmitted energy distributions are very similar for the two samples and are nearly identical to comparable reflection measurements. The transmitted FWHM is slightly broader for the thinner film (~ 0.8 - 0.9 eV) than for the thicker film (~0.6 - 0.7 eV), and similar transmission yields (≤3 - 5) are obtained. However, different beam energies are required to produce the low-energy transmission. To address this issue, the data is analyzed using an electron penetration model and Monte Carlo simulations, along with a qualitative model of the diamond nanostructure.
机译:透射电子光谱法用于检查CVD金刚石薄膜的低能电子传输和发射特性。特别地,根据膜厚度和入射束参数来测量透射电子的强度和能量分布。在具有类似B浓度的两个厚度为0.15μm和2.5μm的膜的测量中检测到低能传输。两种样品的透射能量分布非常相似,并且与可比的反射测量值几乎相同。较薄的薄膜(〜0.8-0.9 eV)的透射FWHM较较厚的薄膜(〜0.6-0.7 eV)稍宽,并且获得了相似的透射率(≤3-5)。然而,需要不同的束能量来产生低能量传输。为了解决这个问题,使用电子渗透模型和蒙特卡洛模拟以及金刚石纳米结构的定性模型对数据进行了分析。

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