首页> 外国专利> Diamond thin film modification method, diamond thin film modification and thin film formation method, and diamond thin film processing method

Diamond thin film modification method, diamond thin film modification and thin film formation method, and diamond thin film processing method

机译:金刚石薄膜改性方法,金刚石薄膜改性和薄膜形成方法以及金刚石薄膜加工方法

摘要

An improved gas phase synthesized diamond, CBN, BCN, or CN thin film having a modified region in which strain, defects, color and the like are reduced and/or eliminated. The thin film can be formed on a substrate or be a free-standing thin film from which the substrate has been removed. The thin film can be stably and reproducibly modified to have an oriented polycrystal structure or a single crystal structure. The thin film is modified by being subjected to and heated by microwave irradiation in a controlled atmosphere. The thin film has a modified region in which a line width of the diamond spectrum evaluated by Raman spectroscopy of 0.1 microns or greater is substantially constant along a film thickness direction of the thin film, and the line width of the modified region is 85% or less of a maximum line width of the residual portion of the film thickness.
机译:改进的气相合成金刚石,CBN,BCN或CN薄膜,其薄膜具有减少和/或消除应变,缺陷,颜色等的修饰区域。薄膜可以形成在基板上,或者可以是已经从基板上去除了基板的自支撑薄膜。薄膜可以被稳定地和可再现地改性以具有取向的多晶结构或单晶结构。该薄膜通过在受控气氛中经受微波辐射并通过微波辐射加热而改性。薄膜具有改质区域,其中通过拉曼光谱法评估的金刚石光谱的线宽为0.1微米或更大沿薄膜的膜厚度方向基本恒定,并且改质区域的线宽为85%或更高。小于膜厚度的剩余部分的最大线宽。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号