SiGe PLANAR MICROCAVITIES WITH STRAIN-BALANCED SiGe/Si DISTRIBUTED BRAGG REFLECTORS

摘要

SiGe planar microcavities with strain-balanced distributed Bragg reflectors (DBRs) were successfully grown on relaxed SiGe virtual substrates, and their optical properties were investigated. Strain balance of the SiGe/Si DBRs was confirmed by X-ray diffraction measurements and Raman spectroscopy, and a record reflectivity of 90% was achieved in a 38.5 pair sample. Spectral changes of photoluminescence due to the microcavity were observed as the excitation power was increased. Moreover, SiGe microcavities with top Si/CaF_2 DBRs showed the drastic intensity enhancement and the significant narrowing of spectral width was observed.