Investigation of microstructural evolution during the growth of epitaxial GaN by correlated in situ optical monitoring, TEM and AFM techniques

摘要

: In a two-step low pressure GaN MOCVD deposition process the different stages of nucleation and growth were microstructurally investigated by TEM, AFM and XRD. In addition information about the progress of deposition was obtained by real time in situ monitoring using laser reflectometry. The results obtained from the ex situ analyses of the evolution of the low temperature nuclei and the progression of coalescence of the high temperature islands were compared and related to the in situ reflectivity data.