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Photoluminescence Characterization of NASICON Material

机译:NASICON材料的光致发光特性

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摘要

Besides gas sensitivity, NASICON (Na super ion conductor) material has luminescence characterization. In this paper, the photoluminescence properties of NASICON and doped-NASICON material are investigated. The NASICON material was synthesized by conventional sol-gel process, and doped with Er_2O_3, Tm_2O_3, Dy_2O_3, CsCl by 1%, 3%, 5% (mass ratio), respectively. The ultraviolet light (325 nm, He-Cd laser) excited luminescent emissions of the resulted powders are recorded vs. wavelength in the 330 nm to 650 nm range. The main peak of the pure NASICON is found at the wavelength of 474 nm (blue light), the transition energy is 2.616 eV. The luminescent intensity is weakened obviously after doping with Er_2O_3 and Tm_2O_3, but is increased after doping with Dy_2O_3 and 3% CsCl.
机译:除气体敏感性外,NASICON(钠超离子导体)材料还具有发光特性。本文研究了NASICON和掺杂的NASICON材料的光致发光特性。 NASICON材料通过常规的溶胶-凝胶法合成,并分别以1%,3%,5%(质量比)掺杂Er_2O_3,Tm_2O_3,Dy_2O_3,CsCl。记录所得粉末的紫外光(325 nm,He-Cd激光)激发的发光发射与波长在330 nm至650 nm之间的关系。纯NASICON的主峰位于474 nm(蓝光)波长处,跃迁能量为2.616 eV。掺Er_2O_3和Tm_2O_3后发光强度明显减弱,但掺Dy_2O_3和3%CsCl后发光强度增加。

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