Electrophoretic deposition method was applied to prepare some solid-electrolyte thick-films of Na1+xZr2SixP3-xO12 (x = 2, 3; NASICON) and Na5DySi4O12 (NDSO) on Au-coated alumina substrates. With the ethanol-based medium, the deposition process was investigated under constant voltage mode. The concentration of the suspension and applied voltage were optimized with respect to the rate of deposition and quality of the deposit. The NASICON (Na3Zr2Si2PO12) -based solid-state ionic conductor thick-film as a host ceramic with a guest Cu+ ion has been produced as a noble phosphor thick-film by using an electrochemical ion doping method. The photoluminescence (PL) device of the NASICON:Cu+ film showed good photo-luminescent peaks near 450-500nm depending on the host materials.
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机译：采用电泳沉积法在金包铝的氧化铝基体上制备了Na1 + xZr2SixP3-xO12（x = 2，3; NASICON）和Na5DySi4O12（NDSO）的固体电解质厚膜。使用乙醇基介质，在恒定电压模式下研究了沉积过程。相对于沉积速率和沉积物质量优化了悬浮液的浓度和施加的电压。通过使用电化学离子掺杂方法，已经制备了具有客体Cu +离子的作为主体陶瓷的基于NASICON（Na 3 Zr 2 Si 2 PO 12）的固态离子导体厚膜，作为贵金属荧光体厚膜。 NASICON：Cu +膜的光致发光（PL）器件在450-500nm附近显示出良好的光致发光峰，具体取决于主体材料。
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