【24h】

Terahertz electronics: The last frontier

机译:太赫兹电子:最后的前沿

获取原文
获取原文并翻译 | 示例

摘要

Semiconductor technology continues to scale along predicted trajectories, delivering transistors with ƒmax values in the THz range. Unfortunately, a high ƒmax is not quite sufficient by itself. An inverse-quartic rolloff in specific output power, coupled with a dramatically increasing atmospheric attenuation as frequencies increase, create degraded link margins that frustrate exploitation of the valuable spectrum from roughly 300GHz to 3THz. This talk will describe compelling uses of this spectrum, including spectroscopy, imaging and XWB (extreme wideband) wireless communications, and will discuss how transistor technology limitations might be overcome by architectural innovations, as well as by new device structures. Exploitation of the terahertz realm represents perhaps the greatest challenge in the history of RF technology, and arguably represents the greatest opportunity.
机译:半导体技术继续沿着预测的轨迹进行扩展,从而为晶体管提供ƒmax值在THz范围内的晶体管。不幸的是,仅靠最大ƒmax还是不够的。特定输出功率的四次反转滚降,再加上随着频率增加而急剧增加的大气衰减,会导致链路余量降低,从而使宝贵的频谱(从大约300GHz到3THz)的开发受挫。本演讲将描述该频谱的引人注目的用途,包括光谱学,成像和XWB(极端宽带)无线通信,并将讨论如何通过架构创新以及新的器件结构克服晶体管技术的局限性。太赫兹域的开发可能代表了射频技术历史上最大的挑战,并且可以说是最大的机遇。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号