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125 to 181 GHz fundamental-wave VCO chips in SiGe technology

机译:采用SiGe技术的125至181 GHz基波VCO芯片

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This paper presents four signal-generation chips that comprise a fundamental-wave voltage-controlled oscillator (VCO), an output buffer, and a divide-by-32 prescaler. The VCOs with contiguous tuning ranges cover almost the full waveguide band from 110 to 170GHz (D-band). The fastest VCO operates at up to 181GHz in combination with the prescaler. The VCOs run on 1.8V, draw ∼35 mA, and achieve a single-sideband phase noise ranging from −92 to −82 dBc/Hz at 1MHz offset frequency. Power consumption of the high-speed frequency divider in the first prescaler stage is 70mW. The circuits are based on an Infineon SiGe technology, which features HBTs with an ƒmax of 340 GHz.
机译:本文介绍了四个信号生成芯片,它们包括基波压控振荡器(VCO),输出缓冲器和32分频预分频器。具有连续调谐范围的VCO几乎覆盖了110至170GHz(D波段)的整个波导波段。结合预分频器,最快的VCO的最高工作频率为181GHz。 VCO在1.8V电压下工作,消耗约35 mA电流,并在1MHz偏移频率下实现了-92至-82 dBc / Hz的单边带相位噪声。预分频器第一阶段中高速分频器的功耗为70mW。这些电路基于英飞凌SiGe技术,该技术具有ƒmax为340 GHz的HBT。

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