Electron beam projection nanopatterning using crystal lattice images obtained from high resolution transmission electron microscopy

摘要

We propose a novel concept of projection-type electron beam lithography to pattern nanometer scale periodic features with better throughput than a conventional-type of electron beam lithography system. Here, the nanometer scale periodic patterns are obtained from the phase contrast high resolution transmission electron microscopy images of the crystalline samples which are tenth of nanometer scales. We, thus, named this method as atomic image projection electron beam lithography (AIPEL). To realize this novel concept, we have modified the objective lens of conventional 200kV field emission transmission electron microscopy and also inserted patterning lens between the objective lens and the lithographic stage to vary the patterning magnification continuously from 50 times to 300 times. By using this AIPEL system, we successfully demonstrate nanopatterns with various sizes and shapes using the various high resolution lattice images obtained from single crystalline Si and polycrystalline β-Si_3N_4. We can vary the shapes of nanometer scale patterns by changing mask materials itself or the zone axis of observation in one mask material, and can vary the size of patterns by changing the magnification of patterning. Finally, we will discuss how one can improve the quality of image obtained from mask material.