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Passivation of type Ⅱ InAs/GaSb superlattice photodetectors

机译:Ⅱ型InAs / GaSb超晶格光电探测器的钝化

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Leakage currents limit the operation of high performance type II InAs/GaSb superlattice photodiode technology. Surface leakage current becomes a dominant limiting factor, especially at the scale of a focal plane array pixel (< 25 μm) and must be addressed. A reduction of the surface state density, unpinning the Fermi level at the surface, and appropriate termination of the semiconductor crystal are all aims of effective passivation. Recent work in the passivation of type Ⅱ InAsGaSb superlattice photodetectors with aqueous sulfur-based solutions has resulted in increased R_0A products and reduced dark current densities by reducing the surface trap density. Additionally, photoluminescence of similarly passivated type II InAs/GaSb superlattice and InAs GaSb bulk material will be discussed.
机译:泄漏电流限制了高性能II型InAs / GaSb超晶格光电二极管技术的运行。表面泄漏电流成为主要的限制因素,尤其是在焦平面阵列像素(<25μm)的范围内,必须解决。表面态密度的降低,在表面上释放费米能级以及半导体晶体的适当终止都是有效钝化的目的。含硫水溶液对Ⅱ型InAsGaSb超晶格光电探测器进行钝化的最新工作通过降低表面陷阱密度,增加了R_0A产物并降低了暗电流密度。另外,将讨论类似钝化的II型InAs / GaSb超晶格和InAs GaSb块状材料的光致发光。

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