首页> 外文会议>Quantum and nonlinear optics IV >Study of the nonlinear optical absorption and refraction of indium doped zinc oxide (IZO) thin films using Z-scan technique
【24h】

Study of the nonlinear optical absorption and refraction of indium doped zinc oxide (IZO) thin films using Z-scan technique

机译:Z扫描技术研究铟掺杂氧化锌(IZO)薄膜的非线性光学吸收和折射

获取原文
获取原文并翻译 | 示例

摘要

Indium doped zinc oxide (IZO) thin films were grown on sapphire substrate by radio frequency (RF/DC) magnetron sputtering technique. The structural characterization and surface morphology of IZO thin films were analyzed using X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The XRD results show that the samples exhibit polycrystalline characteristics and still retained wurtzite structure. The surface morphology of the samples reveals the average crystallite sizes are increased as indium content. In addition, the linear optical properties of IZO thin films were studied by UV-VIS spectrometer with wavelength range 200-900 nm. The high transmittances and the band gap values were observed in both thin films. Moreover, the nonlinear optical absorption and refraction of IZO thin films were investigated using nanosecond Z-scan technique. These samples show self-focusing optical nonlinearity and good two-photon nonlinear optical absorption behaviors. Therefore, these studies make the IZO thin films as the applications in nonlinear optical devices.
机译:通过射频(RF / DC)磁控溅射技术,在蓝宝石衬底上生长了铟掺杂的氧化锌(IZO)薄膜。分别使用X射线衍射(XRD)和扫描电子显微镜(SEM)分析了IZO薄膜的结构特征和表面形貌。 XRD结果表明,样品表现出多晶特性并且仍然保留纤锌矿结构。样品的表面形态表明平均晶粒尺寸随铟含量的增加而增加。另外,用紫外可见分光光度计研究了波长为200-900 nm的IZO薄膜的线性光学性能。在两个薄膜中均观察到高透射率和带隙值。此外,使用纳秒Z扫描技术研究了IZO薄膜的非线性光学吸收和折射。这些样品显示出自聚焦光学非线性和良好的两光子非线性光学吸收行为。因此,这些研究使IZO薄膜成为非线性光学器件中的应用。

著录项

  • 来源
    《Quantum and nonlinear optics IV》|2016年|100291b.1-100291b.8|共8页
  • 会议地点 Beijing(CN)
  • 作者单位

    National Key Laboratory of Tunable Laser Technology, Institute of Optoelectronics, Harbin Institute of Technology, Harbin 150080, China;

    Key Laboratory ofphotonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025. China;

    Key Laboratory ofphotonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025. China;

    National Key Laboratory of Tunable Laser Technology, Institute of Optoelectronics, Harbin Institute of Technology, Harbin 150080, China;

    Key Laboratory ofphotonic and Electric Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025. China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号