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Device- and system-level performance modeling for graphene P-N junction logic

机译:石墨烯P-N结逻辑的设备级和系统级性能建模

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Based on the property of angular dependent transmission probability of electrons observed in graphene PN junctions, a modified MUX-based graphene logic device is introduced. A more elaborate resistance model including ON resistance, leakage resistance and contact resistance is given as well as a capacitance model of the device. Compared with Si CMOS switches, MUX-based logic graphene gates have potentially lower output resistances and a smaller device area. Since interconnects play an ever increasing important role in digital circuit, for the first time, module-level and system-level analyses are made for better evaluating the potential performance of graphene logic devices. Based on the analysis of a 32-bit Han-Carlson adder, module-level evaluation has been done and comparison has been made between graphene logic circuits complemented by multilayer graphene interconnects and CMOS logic circuits with Cu/low k interconnects. The results indicate that MUX-based graphene logic circuits can outperform CMOS circuits in terms of both delay and power consumption. Both devices being evaluated are based on the 15nm technology node. For the system-level analysis, the graphene logic system can have 50% higher throughput than its Si CMOS counterpart with the same power density and die size area.
机译:基于在石墨烯PN结中观察到的电子的角度依赖性传输概率的性质,介绍了一种改进的基于MUX的石墨烯逻辑器件。给出了更精细的电阻模型,包括导通电阻,漏电电阻和接触电阻,以及器件的电容模型。与Si CMOS开关相比,基于MUX的逻辑石墨烯栅极具有更低的输出电阻和更小的器件面积。由于互连在数字电路中起着越来越重要的作用,因此首次进行了模块级和系统级分析,以更好地评估石墨烯逻辑器件的潜在性能。基于对32位Han-Carlson加法器的分析,进行了模块级评估,并比较了由多层石墨烯互连线补充的石墨烯逻辑电路和具有Cu / low k互连线的CMOS逻辑电路。结果表明,基于MUX的石墨烯逻辑电路在延迟和功耗方面都可以胜过CMOS电路。被评估的两个器件均基于15nm技术节点。对于系统级分析,在功率密度和管芯面积相同的情况下,石墨烯逻辑系统的吞吐量可比其Si CMOS同类系统高50%。

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