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Accurate thermal analysis considering nonlinear thermal conductivity

机译:考虑非线性导热系数的精确热分析

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The increase in packing density has led to a higher power density in the chip which in turn has led to an increase in temperature on the chip. Temperature affects reliability, performance and power directly, motivating the need to accurately simulate the thermal profile of a chip. In literature, thermal conductivity is assumed to be a constant in order to obtain a linear system of equations which can be solved efficiently. But thermal conductivity is a nonlinear function of temperature and for silicon it varies by 22% over the range 27-80deg C (McConnell et al., 2001). If the nonlinearity of the thermal conductivity is ignored the thermal profile might be off by 10deg C. Thus to get an accurate thermal profile it is important to consider the nonlinear dependence of the thermal conductivity on temperature. In this paper the nonlinear system arising out of considering the nonlinear thermal conductivity is solved efficiently using a variant of Newton-Raphson. In this paper we also study the abstraction levels under which the approximation of a periodic source by a DC source is valid
机译:堆积密度的增加导致芯片中的功率密度更高,这又导致芯片上的温度升高。温度直接影响可靠性,性能和功率,因此需要精确模拟芯片的热特性。在文献中,为了获得可以有效求解的线性方程组,假设导热系数为常数。但是导热系数是温度的非线性函数,对于硅,导热系数在27-80℃范围内变化22%(McConnell等,2001)。如果忽略了导热系数的非线性,则热曲线可能会偏离10°C。因此,要获得准确的导热曲线,考虑导热系数对温度的非线性依赖性非常重要。在本文中,使用牛顿-拉夫森(Newton-Raphson)的变体有效地解决了由于考虑了非线性导热系数而产生的非线性系统。在本文中,我们还研究了抽象层,在该抽象层下,直流源对周期源的逼近是有效的

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