Exciton emission from plasmonic-organic-III–V-semiconductor nanowires and nanorods

摘要

We study the exciton emission from ensembles of uncoated and plasmonic gold/aluminum quinoline (Alq3) coated GaAs-AlGaAs-GaAs core-shell nanowires (NWs) and GaN nanorods using time-integrated (TI) as well as time resolved (TR) photoluminescence (PL). The ~ 150nm diameter zincblende NWs were grown on GaAs substrate using the Au catalyzed vapor-liquid-solid method. The wurtzite GaN nanorods of ~ 250nm diameter were grown by molecular beam epitaxy. Plasmonic NWs and nanorods were coated with a nominally 10nm thick gold film without or with a several nanometer thick Alq3 interlayer by organic molecular beam deposition.