VOLATILE SINGLE-SOURCE PRECURSORS FOR THE MOCVD OF METAL SILICATE THIN FILMS

摘要

The synthesis and characterisation of two novel complexes namely zirconium bis(trimethylsilinolate)bis(tert-butylacetoacetate) (1) and hafnium bis(trimethylsilinolate)bis(tert-butylacetoacetate) (2) are reported in view of the potential applications as single source precursors for depositing metal silicate thin films by MOCVD. Solid state structure of [Zr(OSiMe_3)_2(tbaoac)_2] revealed the complex to be a six coordinated monomer. Thermal analyses showed the utility of 1 and 2 as promising single-source precursors for the MOCVD of respective metal silicate films. MOCVD carried out using the new precursors over a wide temperature range of 400-800℃ indicated dense and uniform films of composition M_(1-x)Si_xO_2 (M = Zr, Hf) on Si(100) substrate. The film composition was found to be dependent on the deposition temperature where the Si content varied with deposition temperature.