This work exploits a new type of diamond CVD deposition technique that produces nano-crystalline diamond thin films. The polycrystalline film contains very small grains resulting in much lower surface roughness than traditional CVD diamond and nearly equivalent thermal conductivity. As we show the films are easily planarized and can be integrated into microelectronic structures such as SOI. Feasibility of the new structure, silicon-on-diamond, is investigated by means of wafer bonding in a bond-and-grind-back thick film SOI process. Additionally, significant numerical simulations have been performed that illustrate the potential for improving self-heating effects in SOI MOSFETs.
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