LOW-TEMPERATURE WAFER BONDING VIA DBD SURFACE ACTIVATION

摘要

Wafer bonding of Si and Ge wafers activated by dielectric barrier discharge (DBD) is presented in this paper. After low temperature annealing of the bonded pairs no interface bubbles are detected. One reason is the reduction of the carbon concentration on the surfaces treated by DBD. The activation process does not increase the surface micro-roughness and the bond energy of the pre-treated wafers is sufficiently high to allow further processing. Pre-treatment using dielectric barrier discharge (DBD) technique can be successfully applied as an activation process for low-temperature wafer bonding of the same (e.g. Si/Si) as well as dissimilar materials (e.g. Si/Ge). Germanium-on insulator (GeOI) substrates were fabricated by low-temperature wafer bonding via DBD.