OXYGEN PLASMA ETCHING MECHANISMS OF RESIST

摘要

Vertical and horizontal etching of resist was investigated in order to propose modifications to the existing models of plasma etching of resist with oxygen plasmas. Ion bombardment proved to influence dramatically the vertical etch rate, while it also influenced the horizontal etch rate. The horizontal etch rate of a thin resist layer was higher than that of a thick resist layer. These observations are compatible with the model that free oxygen atoms may travel over relatively long distances over inorganic surfaces before binding themselves to the constituents of the resist. The model of adsorption-desorption, however, is not adequate.