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Kinetic phase transitions in the epitaxial growth of compound semiconductors

机译:化合物半导体外延生长中的动力学相变

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摘要

A kinetic theory of the alloy growth instability with respect of fluctuations of alloy composition is developed. The growth mechanism stud ied is the step-flow growth of an alloy from the gas phase on a surface vicinal to the (001) surface of a cubic substrate. The epitaxial growth implies that the adsorbed atoms migrate on the surface during growth of each monolayer, and that their motion is "frozen" afeter the compoletion of the monolayer. The migration consists of diffusion and drift in some effective potential. This potential is a sum of a short-range contribution casued by composition fluctuations in the top completed monolayer and of a long-range elastic contribution caused by composition fouctuations in all completed monolayers. For temperatures lower than a certain critical temperature T_c, drift dominates diffusion. It results in the amplification of alloy composition fluctuations from monolayer to monolayer in the process of the alloy growth. This amplification implies that the growth of a spatially homogeneous alloy is kinetically unstable. In contrast to the effect of long-range elastic forces on the thermodynamic instability of alloys, where the elastic forces hinder the phase separation these forces favor kinetic instability and increase the critical temperature T_c.
机译:建立了关于合金成分波动的合金生长不稳定性的动力学理论。研究的生长机理是合金从气相在邻近的表面到立方衬底的(001)表面的逐步流动。外延生长意味着被吸附的原子在每个单分子层的生长过程中在表面上迁移,并且随着单分子层的合成,它们的运动被“冻结”。迁移包括一些有效电位的扩散和漂移。该潜力是由顶部完成的单分子层中的组分波动引起的短期贡献与所有完成的单分子层中由组分结构引起的远距离弹性贡献的总和。对于低于某个临界温度T_c的温度,漂移占主导地位的扩散。这导致在合金生长过程中合金成分从单层到单层的波动增大。这种放大意味着空间均匀合金的生长在动力学上是不稳定的。与远距离弹性力对合金的热力学不稳定性的影响相反,在弹性力阻碍相分离的情况下,这些力有利于动力学不稳定性并提高临界温度T_c。

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