In this study a summary is presented of data on the recombination centers in 6H-SiC pn structures derived from current-voltage characteristics and diffusion lengths of minority charge carriers. The structures studied were prepared by sublimation epitaxy and liquid-phase epitaxy. The existence has been established and characteristics discussed of some types of centers manifestimg themselves in the recombination in the space-charge and quasineutral regions: these centers introduce a deep level near the midgap and shallow levels with a depth of 50-200 meV; the effective capture cross-section of the deep level decreases with increasing temperature; the parameters of the centers somewhat vary for structures prepared by different techniques.
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